STB60NE06L-16 n - channel 60v - 0.014 w - 60a - d 2 pak osingle feature size ? o power mosfet preliminary data n typical r ds(on) = 0.014 w n avalance rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n high current capability n 175 o c operating temperature n application oriented characterization description this power mosfet is the latest development of stmicroelectronics unique osingle feature size ? o strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n dc-dc & dc-ac converter n automotive environment ? internal schematic diagram june 1998 1 3 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 60 v v dgr drain- gate voltage (r gs =20k w ) 60 v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c60a i d drain current (continuous) at t c =100 o c42a i dm ( ? ) drain current (pulsed) 240 a p tot total dissipation at t c =25 o c150w derating factor 0.57 w/ o c dv/dt peak diode recovery voltage slope 1 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 60 a, di/dt 300 a/ m s, v dd v (br)dss ,t j t jmax type v dss r ds(on) i d STB60NE06L-16 60 v <0.016 w 60 a d 2 pak to-263 (suffix ot4o) 1/5
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1 62.5 0.5 300 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 60 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =25v) 600 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 60 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =250 m a 11.62.5v r ds(on) static drain-source on resistance v gs =5v i d =30a v gs =10v i d =30a 0.014 0.012 0.016 0.014 w w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 60 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =30 a 22 23 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 3200 950 320 4600 1400 480 pf pf pf STB60NE06L-16 2/5
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =25v i d =30a r g =4.7 w v gs =5v 35 270 50 370 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =40v i d =60a v gs =5v 70 20 45 100 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =40v i d =60a r g =4.7 w v gs =5v 45 220 280 65 300 390 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 60 240 a a v sd ( * ) forward on voltage i sd =60a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 60 a di/dt = 100 a/ m s v dd =20v t j =150 o c 120 0.4 6 ns nc a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area STB60NE06L-16 3/5
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.25 1.4 0.049 0.055 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 8.95 9.35 0.352 0.368 e 10 10.28 0.393 0.404 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 l2 l3 l b2 b g e a c2 d c a1 p011p6/c to-263 (d 2 pak) mechanical data STB60NE06L-16 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1998 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . STB60NE06L-16 5/5
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